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| Final data SPD04N60C2 SPU04N60C2 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved noise immunity P-TO251 Product Summary VDS RDS(on) ID 600 0.95 4.5 P-TO252 V A Type SPD04N60C2 SPU04N60C2 Package P-TO252 P-TO251 Ordering Code Q67040-S4307 Q67040-S4306 Marking 04N60C2 04N60C2 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Continuous drain current TC = 25 C TC = 100 C Symbol ID Value 4.5 2.8 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =3.6A, VDD =50V ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 9 130 0.4 4.5 6 20 50 -55... +150 A V/ns V W C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =4.5A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =4.5A, VDS < VDD , di/dt=100A/s, Tjmax=150C Gate source voltage Power dissipation, TC = 25C Operating and storage temperature Page 1 2002-10-07 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPD04N60C2 SPU04N60C2 Symbol min. RthJC RthJA RthJA Tsold - Values typ. max. 2.5 75 75 50 0.4 260 Unit K/W W/K C V(BR)DSS V(BR)DS VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche breakdown voltage VGS =0V, ID =4.5A Gate threshold voltage, VGS = VDS ID =200A, Tj =25C Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 C VDS = 600 V, VGS = 0 V, Tj = 150 C A 0.5 0.85 0.95 1 50 100 0.95 nA Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) RG - Drain-source on-state resistance VGS =10V, ID=2.8A, Tj =25C Gate input resistance f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-10-07 Final data Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 2) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =350V, ID =4.5A, VGS =0 to 10V VDD =350V, ID =4.5A SPD04N60C2 SPU04N60C2 Symbol Conditions min. Values typ. 2.5 580 220 7 20 35 10 31 44 12.5 66 18.8 max. Unit g fs Ciss Coss Crss V DS2*I D*R DS(on)max, ID=2.8A V GS=0V, V DS=25V, f=1MHz - S pF Effective output capacitance, 1) Co(er) V GS=0V, V DS=0V to 480V pF t d(on) tr t d(off) tf V DD=380V, V GS=0/13V, ID=4.5A, RG=18, Tj=125C - ns - 4.5 11 17.6 8 22.9 - nC V(plateau) VDD =350V, ID =4.5A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-10-07 Final data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt V GS=0V, I F=IS V R=350V, I F=I S , diF/dt=100A/s SPD04N60C2 SPU04N60C2 Symbol Conditions min. Values typ. 1 900 3.2 12 440 max. 4.5 9 1.2 1530 - Unit IS ISM TC=25C - A V ns C A A/s Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.039 0.083 0.101 0.262 0.294 0.094 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00008293 0.000282 0.0004859 0.0006523 0.005017 0.052 Ws/K Unit Symbol Value typ. Unit Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2002-10-07 Final data 1 Power dissipation Ptot = f (TC ) 55 SPD04N60C2 SPD04N60C2 SPU04N60C2 2 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC =25C 10 1 W A 45 40 Ptot 10 0 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 10 -1 ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T 10 1 4 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 10 s, VGS 14 K/W A 10 0 20V 12V 10V 9.5V ZthJC 10 ID 8 10 -1 9V 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 8.5V 6 8V 4 7.5V 2 7V 6.5V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 5 10 15 V VDS 25 Page 5 2002-10-07 Final data 5 Typ. output characteristic ID = f (VDS ); Tj=150C parameter: tp = 10 s, VGS 8 SPD04N60C2 SPU04N60C2 6 Typ. drain-source on resistance RDS(on) =f(ID ) parameter: Tj =150C, VGS 5 A 20V 12V 10V 9.5V 9V 8.5V RDS(on) 4 ID 8V 3.5 4 7.5V 3 2.5 7V 2 6.5V 6V 2 1.5 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 1 2 3 4 5 6 7 0 0 5 10 15 V VDS 25 1 0 A ID 8.5 7 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 2.8 A, VGS = 10 V 5.5 SPD04N60C2 8 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 16 4.5 A RDS(on) 4 3.5 3 12 ID 10 25 C 150 C 8 2.5 2 1.5 98% 1 0.5 0 -60 -20 20 60 100 C 6 4 typ 2 180 0 0 2 4 6 8 10 12 14 16 Tj Page 6 V 20 VGS 2002-10-07 Final data 9 Forward characteristics of body diode IF = f (VSD ) parameter: Tj , tp = 10 s 10 1 SPD04N60C2 SPD04N60C2 SPU04N60C2 10 Typ. switching time t = f (RG ), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V, ID=4.5 A 10 3 A ns td(off) td(on) 10 0 10 2 IF t tr tf 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 10 1 0.4 0.8 1.2 1.6 2 2.4 V 3 10 0 0 20 40 60 80 100 120 140 160 VSD 200 RG 11 Typ. switching losses1) E = f (ID ), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, RG =18 0.12 *) E on includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions. 12 Typ. switching losses1) E = f(RG ), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V,ID =4.5A 0.22 mWs mWs *) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. 0.18 The values can be different under other operating conditions. 0.16 0.08 E E 0.06 0.14 0.12 0.1 Eon* Eoff Eon* 0.04 Eoff 0.08 0.06 0.02 0.04 0.02 0 0 1 2 3 4 5 6 A ID 8 0 0 20 40 60 80 100 120 140 160 200 RG Page 7 2002-10-07 Final data 13 Avalanche SOA IAR = f (tAR ) par.: Tj 150 C 4.5 SPD04N60C2 SPU04N60C2 14 Avalanche energy EAS = f (Tj ) par.: ID = 3.6 A, VDD = 50 V 160 T j(START)=25C A mJ 3.5 120 EAS T j(START)=125C IAR 3 2.5 100 80 2 60 1.5 1 0.5 0 -3 10 40 20 10 -2 10 -1 10 0 10 1 10 2 4 s 10 tAR 0 20 40 60 80 100 120 C 160 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPD04N60C2 16 Avalanche power losses PAR = f (f ) parameter: EAR =0.4mJ 200 720 V W V (BR)DSS 680 660 640 150 P AR 125 100 620 75 600 580 560 540 -60 50 25 -20 20 60 100 C 180 04 10 10 5 Hz f 10 6 Tj Page 8 2002-10-07 Final data 17 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 3.5 SPD04N60C2 SPU04N60C2 18 Typ. Coss stored energy Eoss=f(VDS ) pF J 10 3 Ciss C E oss 10 2 2.5 2 1.5 Coss 10 1 Crss 1 0.5 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Definition of diodes switching characteristics Page 9 2002-10-07 Final data P-TO-252-3-1 (D-PAK) SPD04N60C2 SPU04N60C2 6.5 +0.15 -0.10 A 1 0.1 2.3 +0.05 -0.10 B 0.9 +0.08 -0.04 5.4 0.1 0.8 0.15 9.9 0.5 6.22 -0.2 0.51 min 0.15 max per side 3x 0.75 0.1 2.28 0...0.15 0.5 +0.08 -0.04 1 0.1 4.57 0.25 M AB 0.1 GPT09051 All metal surfaces tin plated, except area of cut. P-TO-251-3-1 (I-PAK) 6.5 +0.15 -0.10 A 1 0.1 2.3 +0.05 -0.10 B 0.9 +0.08 -0.04 5.4 0.1 C 6.22 -0.2 0.15 max per side 9.3 0.4 3 x 0.75 0.1 2.28 4.56 0.25 M 0.5 +0.08 -0.04 1.0 ABC GPT09050 All metal surfaces tin plated, except area of cut. Page 10 2002-10-07 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPD04N60C2 SPU04N60C2 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2002-10-07 |
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